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IPD65R225C7 - Infineon

Description: MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7

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IPD65R225C7 - Infineon PCB footprint - Other - Other - PG-TO252_3
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IPD65R225C7 - Infineon  - 3D model - Other - PG-TO252_3
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IPD65R225C7 Details

  • Manufacturer Part Number:

    IPD65R225C7

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Package Description:

    GREEN, PLASTIC, DPAK-3/2

  • Pin Count:

    3

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    48 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.225 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    41 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD65R225C7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD65R225C7 is -40°C to 150°C.
  • To ensure reliability, follow the recommended thermal design and layout guidelines, and ensure proper cooling and heat dissipation in the system.
  • The recommended PCB layout and thermal design for the IPD65R225C7 can be found in the Infineon application note AN2013-01, which provides guidelines for optimal thermal performance.
  • Yes, the IPD65R225C7 is designed for high-voltage applications up to 650V, but ensure that the device is properly biased and that the maximum voltage ratings are not exceeded.
  • Follow proper ESD handling and storage procedures, and consider using ESD protection devices or circuits in the system design to prevent damage to the IPD65R225C7.

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IPD65R225C7 Overview

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