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IPD65R660CFDA - Infineon

Description: MOSFET N-Ch 650V 6A DPAK-2

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IPD65R660CFDA Details

  • Manufacturer Part Number:

    IPD65R660CFDA

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    115 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.66 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    17 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD65R660CFDA Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure good airflow around the device, use a heat sink if possible, and consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • The maximum allowed voltage on the gate driver output is 15V, but it's recommended to keep it below 12V to ensure reliable operation and minimize electromagnetic interference (EMI).
  • Yes, the IPD65R660CFDA is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the PCB layout and component selection are optimized for high-frequency operation to minimize losses and EMI.
  • Use a fuse or a current-sensing resistor to detect overcurrent conditions, and consider adding overvoltage protection (OVP) circuitry to prevent damage from voltage spikes or surges.

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IPD65R660CFDA Overview

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