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IPD70N10S3L-12 - Infineon

Description: Infineon IPD70N10S3L-12 N-channel MOSFET Transistor, 70 A, 100 V, 3-Pin TO-252

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IPD70N10S3L-12 - Infineon PCB footprint - Other - Other - PG-TO252-3-11_2023-5
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IPD70N10S3L-12 Details

  • Manufacturer Part Number:

    IPD70N10S3L-12

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Package Description:

    TO-252-3-11, 3/2 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    410 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.0152 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    135 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    280 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD70N10S3L-12 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD70N10S3L-12 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
  • The recommended gate resistor value for the IPD70N10S3L-12 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IPD70N10S3L-12 can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
  • To protect the IPD70N10S3L-12 from overvoltage and overcurrent conditions, it's recommended to use a voltage clamp or a surge protector, and to implement overcurrent protection using a current sense resistor and a comparator.

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IPD70N10S3L-12 Overview

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Power Field-Effect Transistor, 70A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252