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IPD70R360P7S - Infineon

Description: N-CH 700V 12,5A 360mOhm TO252

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IPD70R360P7S - Infineon PCB footprint - Other - Other - PG-TO252-3,
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IPD70R360P7S Details

  • Manufacturer Part Number:

    IPD70R360P7S

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    700 V

  • Drain Current-Max (ID):

    12.5 A

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    59.5 W

  • Pulsed Drain Current-Max (IDM):

    34 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD70R360P7S Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD70R360P7S is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade at extreme temperatures.
  • To ensure proper cooling, it's recommended to use a heat sink with a thermal resistance of less than 1 K/W. Additionally, ensure good airflow around the device, and avoid blocking the heat sink's airflow path. You can also consider using thermal interface materials to improve heat transfer.
  • For optimal performance and reliability, it's recommended to follow Infineon's guidelines for PCB layout and design. This includes using a multi-layer PCB, placing decoupling capacitors close to the device, and minimizing track lengths and widths to reduce parasitic inductance and resistance.
  • To protect the device from overvoltage and overcurrent conditions, it's recommended to use a voltage regulator or a DC-DC converter with overvoltage protection (OVP) and overcurrent protection (OCP) features. Additionally, consider using a fuse or a current-limiting resistor in series with the device to prevent damage from excessive current.
  • The recommended gate drive circuits and components for the IPD70R360P7S include using a dedicated gate driver IC, such as the Infineon 1EDC or 2EDC family, along with a suitable gate resistor and capacitor. The gate driver should be able to provide a high peak current and a fast rise time to ensure proper switching of the device.

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