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IPD70R900P7SAUMA1 - Infineon

Description: INFINEON - IPD70R900P7SAUMA1 - MOSFET, N-CH, 700V, 6A, TO-252-3

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IPD70R900P7SAUMA1 - Infineon PCB footprint - Other - Other - PG-TO252 -3_ffw_1
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IPD70R900P7SAUMA1 - Infineon  - 3D model - Other - PG-TO252 -3_ffw_1
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IPD70R900P7SAUMA1 Details

  • Manufacturer Part Number:

    IPD70R900P7SAUMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    700 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.9 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30.5 W

  • Pulsed Drain Current-Max (IDM):

    12.8 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD70R900P7SAUMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPD70R900P7SAUMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • A 2-layer or 4-layer PCB with a solid ground plane and a separate power plane is recommended. The device should be placed near the power source and the output stage should be placed near the load.
  • Use a voltage regulator or a voltage supervisor to ensure the input voltage is within the recommended range of 12V to 15V. Add overvoltage protection (OVP) and undervoltage protection (UVP) circuits to prevent damage from voltage transients.
  • The recommended gate drive voltage is 12V to 15V, with a maximum gate drive current of 2A.

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IPD70R900P7SAUMA1 Overview

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Part Image IPD70R900P7S Infineon Technologies AG

Power Field-Effect Transistor, 700V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252