IPD80R1K4P7ATMA1 footprint, schematic symbol and 3D model by Infineon

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IPD80R1K4P7ATMA1 - Infineon PCB footprint - Other - Other - DPAK

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Part Number IPD80R1K4P7ATMA1
Manufacturer Infineon
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - DPAK
Released Date Apr 11, 2022
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

IPD80R1K4P7ATMA1 Details

Manufacturer Part Number:
IPD80R1K4P7ATMA1
Pbfree Code:
Yes
Rohs Code:
Yes
Part Life Cycle Code:
Active
Country Of Origin:
Germany, Mainland China
ECCN Code:
EAR99
Factory Lead Time:
17 Weeks
Date Of Intro:
2018-02-09
Manufacturer:
Infineon Technologies AG
YTEOL:
6
Avalanche Energy Rating (Eas):
8 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
800 V
Drain-source On Resistance-Max:
1.4 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-252
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
8.9 A
Surface Mount:
YES
Terminal Finish:
Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

IPD80R1K4P7ATMA1 Frequently Asked Questions (FAQs)

A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
Ensure proper heat sinking, use a thermally conductive material for the PCB, and consider using a heat sink or thermal interface material. Also, follow the recommended operating conditions and derating guidelines.
A gate drive circuit with a high current capability (e.g., 1A to 2A) and a fast rise/fall time (e.g., <10ns) is recommended. A dedicated gate driver IC or a discrete transistor-based design can be used.
Use a TVS diode or a zener diode for overvoltage protection. For overcurrent protection, consider using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
A dead time of 100ns to 200ns is recommended to ensure proper switching and to prevent shoot-through currents. The exact dead time may vary depending on the specific application and switching frequency.

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IPD80R1K4P7ATMA1 Overview

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