Part Image

IPD80R2K4P7ATMA1 - Infineon

Description: MOSFET LOW POWER_NEW

Download IPD80R2K4P7ATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPD80R2K4P7ATMA1 - Infineon PCB footprint - Other - Other - IPD80R2K4P7ATMA1-1
click to zoom

IPD80R2K4P7ATMA1 Details

  • Manufacturer Part Number:

    IPD80R2K4P7ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    4 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain-source On Resistance-Max:

    2.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    5.3 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD80R2K4P7ATMA1 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK, and follow the recommended PCB layout guidelines. Also, consider using a heat sink with a thermal resistance of less than 10°C/W.
  • The maximum allowed voltage on the gate pin is 20V, but it's recommended to keep it below 15V to ensure reliable operation and prevent damage to the device.
  • Yes, the IPD80R2K4P7ATMA1 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the PCB layout is optimized for high-frequency operation, and consider using a gate driver with a high current capability.
  • Use a fuse or a current-sensing resistor to detect overcurrent conditions. For overvoltage protection, consider using a voltage supervisor or a zener diode to clamp the voltage to a safe level. Also, ensure that the device is operated within the recommended voltage and current ratings.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPD80R2K4P7ATMA1 Overview

Use the download button to access the IPD80R2K4P7ATMA1 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like IPD80, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPD80R2K4P7ATMA1

Showing 0 results