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IPD80R450P7ATMA1 - Infineon

Description: MOSFET LOW POWER_NEW

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IPD80R450P7ATMA1 - Infineon PCB footprint - Other - Other - IPD80R450P7ATMA1-3
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IPD80R450P7ATMA1 Details

  • Manufacturer Part Number:

    IPD80R450P7ATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    29 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.45 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    73 W

  • Pulsed Drain Current-Max (IDM):

    29 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD80R450P7ATMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • Infineon provides a range of recommended gate drive circuits in their application notes and design guides, including AN2013-01 and AN2019-01. These circuits are optimized for the IPD80R450P7ATMA1's specific characteristics and can help ensure reliable operation.
  • To protect the device from overvoltage and overcurrent conditions, it's recommended to use a suitable overvoltage protection circuit, such as a transient voltage suppressor (TVS) or a voltage clamp, and to implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • To prevent damage and ensure reliability, it's essential to follow the recommended storage and handling procedures outlined in the datasheet, including proper packaging, storage temperature and humidity ranges, and electrostatic discharge (ESD) protection measures.

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