Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IPD80R600P7ATMA1 - Infineon

Description: Power MOSFET, N Channel, 800 V, 8 A, 0.51 ohm, TO-252 (DPAK), Surface Mount

Download IPD80R600P7ATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IPD80R600P7ATMA1 - Infineon - PCB symbol
click to zoom
PCB Footprints
IPD80R600P7ATMA1 - Infineon PCB footprint - Other - Other - PG-TO252-3-341_2025
click to zoom
3D Models
IPD80R600P7ATMA1 - Infineon - 3D model - Other - PG-TO252-3-341_2025
click to zoom

IPD80R600P7ATMA1 Details

  • Manufacturer Part Number:

    IPD80R600P7ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    22 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD80R600P7ATMA1 Frequently Asked Questions (FAQs)

  • Infineon recommends a 2-layer or 4-layer PCB with a thermal via array under the device to ensure good heat dissipation. A minimum of 10 thermal vias with a diameter of 0.3 mm is recommended.
  • Ensure good airflow around the device, and consider using a heat sink or thermal interface material to improve heat transfer. The device's thermal pad should be connected to a solid ground plane on the PCB to aid heat dissipation.
  • The maximum allowed voltage on the gate driver output is 15 V, with a maximum transient voltage of 18 V for a duration of 100 ns.
  • Use a fuse or a current sense resistor to detect overcurrent conditions, and consider adding overvoltage protection devices such as TVS diodes or Zener diodes to protect the device from voltage transients.
  • The recommended gate resistance is between 1 ohm and 10 ohms, depending on the specific application requirements and switching frequency.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPD80R600P7ATMA1 Overview

Use the download button to access the IPD80R600P7ATMA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPD80, or try a keyword search, such as Power Field-Effect Transistors

Suggested Parts

If you searched for IPD80R600P7ATMA1, you might also be interested in these parts:
Part Number
BSS126H6327XTSA2
CSD19532KTT
TLP383(BL-TPL,E(T
CPC3982TTR
UCC28740D
43045-0810
43045-1600
ADC10832
ADC10832CIN

Parts related to IPD80R600P7ATMA1

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

IPD80R600P7ATMA1 Alternates

Showing results

Image Part Number Model
Part Image IPD80R600P7 Infineon Technologies AG

Power Field-Effect Transistor, 8A I(D), 800V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252