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IPDD60R045CFD7 - Infineon

Description: N-CH 600V 61A 38mOhm HDSOP-10-1 600VCoolMOS CFD7PowerTransistor MOSFET

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IPDD60R045CFD7 - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - PG-HDSOP-10-1
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3D Models
IPDD60R045CFD7 - Infineon  - 3D model - Small Outline Packages - PG-HDSOP-10-1
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IPDD60R045CFD7 Details

  • Manufacturer Part Number:

    IPDD60R045CFD7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-09-16

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    61 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G10

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    10

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    379 W

  • Pulsed Drain Current-Max (IDM):

    153 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IPDD60R045CFD7 Overview

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