IPDD60R080G7XTMA1 - Infineon

IPDD60R080G7XTMA1 Details

• Manufacturer Part Number:

  IPDD60R080G7XTMA1

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Country Of Origin:

  Austria, Germany, Malaysia

• ECCN Code:

  EAR99

• Factory Lead Time:

  17 Weeks

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  7

• Avalanche Energy Rating (Eas):

  97 mJ

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  600 V

• Drain Current-Max (ID):

  29 A

• Drain-source On Resistance-Max:

  0.08 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JEDEC-95 Code:

  TO-252

• JESD-30 Code:

  R-PDSO-G10

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  10

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  174 W

• Pulsed Drain Current-Max (IDM):

  83 A

• Surface Mount:

  YES

• Terminal Finish:

  Tin (Sn)

• Terminal Form:

  GULL WING

• Terminal Position:

  DUAL

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON