- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IPDD60R125G7XTMA1
- Part Number IPDD60R125G7XTMA1
- Manufacturer Infineon
- Pin Count 11
- Part Category MOSFET (N-Channel)
- Package Category Small Outline Packages
- Footprint Name Small Outline Packages - PG-HDSOP-10-1
- Released Date Apr 23, 2021
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
IPDD60R125G7XTMA1 Details
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Manufacturer Part Number:
IPDD60R125G7XTMA1
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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Country Of Origin:
Austria, Germany, Malaysia
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ECCN Code:
EAR99
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Factory Lead Time:
17 Weeks
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Manufacturer:
Infineon Technologies AG
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YTEOL:
6
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Avalanche Energy Rating (Eas):
64 mJ
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
600 V
IPDD60R125G7XTMA1 Frequently Asked Questions (FAQs)
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The maximum operating temperature range for the IPDD60R125G7XTMA1 is -55°C to 175°C, as specified in the datasheet.
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To ensure safe operating area (SOA), follow the guidelines in the datasheet, considering factors like voltage, current, and temperature. Additionally, use a thermal model to simulate the device's behavior under various operating conditions.
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The recommended gate drive voltage for the IPDD60R125G7XTMA1 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
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To minimize power losses, optimize the gate drive circuitry, ensure proper thermal management, and consider using a low-loss gate driver IC. Additionally, consider using a MOSFET with a lower RDS(on) value, like the IPDD60R125G7XTMA1, which has a low RDS(on) of 60mΩ.
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Yes, the IPDD60R125G7XTMA1 is suitable for high-frequency switching applications due to its low gate charge (Qg) and low output capacitance (Coss). However, the maximum switching frequency depends on the specific application and the device's thermal performance.
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IPDD60R125G7XTMA1 Overview
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