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IPDD60R150G7XTMA1 - Infineon

Description: MOSFET HIGH POWER_NEW

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IPDD60R150G7XTMA1 - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - PG-HDSOP-10-1
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IPDD60R150G7XTMA1 - Infineon  - 3D model - Small Outline Packages - PG-HDSOP-10-1
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IPDD60R150G7XTMA1 Details

  • Manufacturer Part Number:

    IPDD60R150G7XTMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HDSOP-10-1, 10 PIN

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    53 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G10

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    10

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    95 W

  • Pulsed Drain Current-Max (IDM):

    45 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPDD60R150G7XTMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPDD60R150G7XTMA1 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • Proper thermal management is crucial for the IPDD60R150G7XTMA1. Ensure good thermal contact between the module and the heat sink, use a suitable thermal interface material, and maintain a low thermal resistance. Additionally, consider using a fan or other cooling system to keep the module within the recommended temperature range.
  • The recommended gate resistance value for the IPDD60R150G7XTMA1 is between 10 ohms and 20 ohms. This value helps to prevent oscillations and ensures stable operation. However, the optimal gate resistance value may vary depending on the specific application and circuit design.
  • Yes, the IPDD60R150G7XTMA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive circuits are designed to handle the increased current. Additionally, consider the thermal management and cooling requirements for the parallel configuration.
  • The recommended switching frequency for the IPDD60R150G7XTMA1 depends on the specific application and circuit design. However, as a general guideline, Infineon recommends a maximum switching frequency of 20 kHz for this module. Higher switching frequencies may lead to increased losses and reduced reliability.

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