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IPDD60R190G7XTMA1 - Infineon

Description: INFINEON - IPDD60R190G7XTMA1 - MOSFET, N-CH, 600V, 13A, HDSOP

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IPDD60R190G7XTMA1 - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - PG-HDSOP-10-1
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IPDD60R190G7XTMA1 - Infineon  - 3D model - Small Outline Packages - PG-HDSOP-10-1
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IPDD60R190G7XTMA1 Details

  • Manufacturer Part Number:

    IPDD60R190G7XTMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    42 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PDSO-G10

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    10

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    76 W

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPDD60R190G7XTMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPDD60R190G7XTMA1 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • Proper thermal management is crucial for the IPDD60R190G7XTMA1. Ensure good thermal contact between the module and the heat sink, use a suitable thermal interface material, and maintain a low thermal resistance between the module and the heat sink. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the IPDD60R190G7XTMA1 is typically between 10 ohms to 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the IPDD60R190G7XTMA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential damage to the modules.
  • The maximum allowable voltage transient for the IPDD60R190G7XTMA1 is typically around 10% to 15% of the maximum rated voltage. Exceeding this limit can cause damage to the module. It's recommended to use a suitable voltage clamp or snubber circuit to limit voltage transients.

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