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IPDQ60R010S7 - Infineon

Description: N-Channel 600V 50A (Tc) 694W (Tc) Surface Mount PG-HDSOP-22-1

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IPDQ60R010S7 - Infineon PCB footprint - Other - Other - IPDQ60R010S7-6
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IPDQ60R010S7 Details

  • Manufacturer Part Number:

    IPDQ60R010S7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-10-12

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    616 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G22

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    22

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    694 W

  • Pulsed Drain Current-Max (IDM):

    801 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPDQ60R010S7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPD60R010S7 is 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material. The datasheet recommends a thermal resistance of less than 1 K/W for the heat sink. Additionally, ensure good airflow around the device and avoid thermal hotspots.
  • The recommended gate drive voltage for the IPD60R010S7 is between 10 V and 15 V. However, the device can tolerate gate voltages up to 20 V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage and ensure reliable operation.
  • To protect the IPD60R010S7 from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and overcurrent protection circuit. Additionally, consider using a TVS (Transient Voltage Suppressor) diode to protect the device from voltage spikes and transients.
  • The maximum allowed drain-source voltage for the IPD60R010S7 is 600 V. Exceeding this voltage can cause damage to the device and affect its reliability.

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IPDQ60R010S7 Overview

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