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IPI70N04S4-06 - Infineon

Description: Infineon IPI70N04S4-06 N-channel MOSFET Module, 70 A, 40 V, 3-Pin TO-262

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IPI70N04S4-06 - Infineon - PCB symbol
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PCB Footprints
IPI70N04S4-06 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - P-TO262-3-1
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3D Models
IPI70N04S4-06 - Infineon - 3D model - Transistor Outline, Vertical - P-TO262-3-1
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IPI70N04S4-06 Details

  • Manufacturer Part Number:

    IPI70N04S4-06

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-262AA

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    72 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.0065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    58 W

  • Pulsed Drain Current-Max (IDM):

    280 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPI70N04S4-06 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPI70N04S4-06 is -40°C to 150°C.
  • To ensure reliability, follow the recommended thermal design guidelines, use a suitable heat sink, and ensure proper cooling. Also, consider derating the device's power handling capability at high temperatures.
  • Infineon provides a recommended PCB layout and thermal design guide in their application notes and evaluation boards. Follow these guidelines to ensure optimal thermal performance and minimize parasitic inductances.
  • Yes, the IPI70N04S4-06 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly snubbed and that the PCB layout is optimized for high-frequency operation.
  • Use a suitable overvoltage protection circuit, such as a TVS diode or a zener diode, to protect the device from voltage transients. Also, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IPI70N04S4-06 Overview

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IPI70N04S4-06 Alternates

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Part Image IPI70N04S4-06 Rochester Electronics LLC

70A, 40V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Part Image IPI70N04S406AKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 70A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA