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IPL65R070C7 - Infineon

Description: MOSFET HIGH POWER BEST IN CLASS

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PCB Footprints
IPL65R070C7 - Infineon PCB footprint - Other - Other - PG-VSON-4, ThinPAK8x8
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3D Models
IPL65R070C7 - Infineon  - 3D model - Other - PG-VSON-4, ThinPAK8x8
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IPL65R070C7 Details

  • Manufacturer Part Number:

    IPL65R070C7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    171 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    28 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2A

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    145 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPL65R070C7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPL65R070C7 is -40°C to 150°C.
  • To ensure the safe operating area (SOA) of IPL65R070C7, you should follow the guidelines provided in the datasheet, including limiting the voltage and current within the specified ranges, and ensuring proper thermal management.
  • The recommended gate resistor value for IPL65R070C7 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • To minimize the effects of parasitic inductance, use a low-inductance layout, keep the gate and source connections as short as possible, and consider using a gate resistor to slow down the switching edge.
  • The maximum allowed dv/dt for IPL65R070C7 is typically in the range of 5-10 kV/μs, depending on the specific application and operating conditions.

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