Part Image

IPL65R070C7AUMA1 - Infineon

Description: MOSFETs HIGH POWER BEST IN CLASS

Download IPL65R070C7AUMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IPL65R070C7AUMA1 - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IPL65R070C7AUMA1 Details

  • Manufacturer Part Number:

    IPL65R070C7AUMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    VSON-4

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    171 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    28 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2A

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    145 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPL65R070C7AUMA1 Frequently Asked Questions (FAQs)

  • The IPL65R070C7AUMA1 can operate safely between -40°C to 150°C, with a maximum junction temperature of 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value is between 10 Ω to 20 Ω, depending on the specific application and switching frequency.
  • Yes, the IPL65R070C7AUMA1 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are synchronized and the thermal management is adequate.
  • The maximum allowable voltage transient for the IPL65R070C7AUMA1 is ±10% of the maximum rated voltage, with a maximum duration of 10 ms.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IPL65R070C7AUMA1 Overview

Use the download button to access the IPL65R070C7AUMA1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IPL65, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPL65R070C7AUMA1

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview