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IPL65R1K0C6SATMA1 - Infineon

Description: MOSFET N-Ch 650V 4.2A ThinPAK 5x6

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IPL65R1K0C6SATMA1 Details

  • Manufacturer Part Number:

    IPL65R1K0C6SATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, THINPAK-5

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    50 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain-source On Resistance-Max:

    1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    12.3 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPL65R1K0C6SATMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • The selection of a suitable gate driver depends on the specific application requirements, such as voltage, current, and switching frequency. Infineon recommends using their EiceDRIVER gate driver family, which is specifically designed for their IGBT modules. The EiceDRIVER datasheet provides guidance on selecting the correct driver for the IPL65R1K0C6SATMA1.
  • The IPL65R1K0C6SATMA1 has an internal overcurrent protection feature that limits the maximum current to 2.5 times the nominal current (Ic) for a short duration (typically 10 μs). This protection is designed to prevent damage to the IGBT module in case of an overcurrent event. However, it is still important to design the system with external overcurrent protection to ensure safe operation.
  • To ensure reliable operation in high-temperature environments, it is essential to follow Infineon's guidelines for thermal management, including proper heat sink design, thermal interface material selection, and cooling system design. Additionally, the system should be designed to operate within the specified junction temperature (Tj) range of -40°C to 150°C.
  • Infineon recommends storing the IPL65R1K0C6SATMA1 in a dry, cool place, away from direct sunlight and moisture. The module should be handled with care to avoid mechanical stress, and electrostatic discharge (ESD) precautions should be taken to prevent damage to the device.

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IPL65R1K0C6SATMA1 Overview

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