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IPL65R230C7 - Infineon

Description: MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7

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IPL65R230C7 - Infineon PCB footprint - Other - Other - ThinPAK8x8
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IPL65R230C7 - Infineon  - 3D model - Other - ThinPAK8x8
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IPL65R230C7 Details

  • Manufacturer Part Number:

    IPL65R230C7

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    48 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.23 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2A

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    41 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPL65R230C7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPL65R230C7 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for the IPL65R230C7 is between 10 Ω and 100 Ω, depending on the specific application and switching frequency.
  • Yes, the IPL65R230C7 is suitable for high-reliability applications, as it is designed and manufactured with high-quality materials and processes to ensure long-term reliability.
  • Protection from overvoltage and overcurrent can be achieved by using a voltage clamp or a surge protector, and implementing overcurrent protection using a fuse or a current-sensing resistor.

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Part Image IPL65R230C7AUMA1 Infineon Technologies AG

Power Field-Effect Transistor, 10A I(D), 650V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET