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IPL65R340CFDAUMA1 - Infineon

Description: MOSFET N-Ch 700V 10.9A VSON-5

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IPL65R340CFDAUMA1 Details

  • Manufacturer Part Number:

    IPL65R340CFDAUMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    VSON-4

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    290 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    10.9 A

  • Drain-source On Resistance-Max:

    0.34 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2A

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104.2 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPL65R340CFDAUMA1 Frequently Asked Questions (FAQs)

  • The IPL65R340CFDAUMA1 can operate safely between -40°C to 150°C, with a maximum junction temperature of 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value is between 10 Ω to 20 Ω, depending on the specific application and switching frequency.
  • Yes, the IPL65R340CFDAUMA1 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are properly synchronized and the thermal management is adequate.
  • The IPL65R340CFDAUMA1 can withstand voltage transients up to 1.5 times the maximum rated voltage (VCE) for a duration of ≤ 10 μs.

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Part Image IPL65R340CFDAUMA2 Infineon Technologies AG

Power Field-Effect Transistor, 10.9A I(D), 650V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET