IPL65R650C6SATMA1 - Infineon

IPL65R650C6SATMA1 Details

• Manufacturer Part Number:

  IPL65R650C6SATMA1

• Pbfree Code:

  Yes

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Obsolete

• Package Description:

  6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, THINPAK-5

• ECCN Code:

  EAR99

• HTS Code:

  8541.29.00.95

• Factory Lead Time:

  111 Weeks

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  0

• Avalanche Energy Rating (Eas):

  142 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  650 V

• Drain-source On Resistance-Max:

  0.65 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  R-PDSO-N5

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  5

• Operating Mode:

  ENHANCEMENT MODE

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Pulsed Drain Current-Max (IDM):

  16.6 A

• Surface Mount:

  YES

• Terminal Finish:

  Tin (Sn)

• Terminal Form:

  NO LEAD

• Terminal Position:

  DUAL

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON