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IPN60R360P7S - Infineon

Description: 600VCoolMOS P7PowerTransistor VDS max: 650V, RDS (on) max: 360mΩ, Qg,typ: 13nC, ID,pulse: 26A, Eoss @ 400V: 1.6µJ, Body diode diF/dt: 900A/µs, Package: PG-SOT223

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IPN60R360P7S - Infineon PCB footprint - Other - Other - IPN60R360P7S
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IPN60R360P7S Details

  • Manufacturer Part Number:

    IPN60R360P7S

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-223, 3 PIN

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-06-23

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    27 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    7 W

  • Pulsed Drain Current-Max (IDM):

    26 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPN60R360P7S Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPN60R360P7S is -40°C to 150°C, with a junction temperature (Tj) of up to 175°C.
  • To ensure reliability, follow the recommended operating conditions, use a suitable heat sink, and implement proper thermal management. Additionally, consider using a gate driver with a high current capability and a low voltage drop to minimize power losses.
  • The recommended gate resistance for the IPN60R360P7S is between 1 ohm and 10 ohms, depending on the specific application and switching frequency. A lower gate resistance can help reduce switching losses, but may also increase the risk of oscillations.
  • Yes, the IPN60R360P7S can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and oscillations.
  • The maximum allowed voltage transient for the IPN60R360P7S is 400 V, with a maximum duration of 100 ns. Exceeding this limit can cause damage to the device.

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