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IPN60R600P7S - Infineon

Description: 600VCoolMOS P7PowerTransistor VDS max: 650V, RDS (on) max: 600mΩ, Qg,typ: 9nC, ID,pulse: 16A, Eoss @ 400V: 1.1µJ, Body diode diF/dt: 900A/µs, SMT, Package: PG-SOT223

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IPN60R600P7S - Infineon PCB footprint - Other - Other - IPN60R600P7S
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IPN60R600P7S Details

  • Manufacturer Part Number:

    IPN60R600P7S

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-223, 3 PIN

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-06-23

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    7 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPN60R600P7S Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPN60R600P7S is 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's drain pad, and ensure the heat sink is securely fastened to the device. Additionally, consider the thermal resistance of the heat sink and the PCB layout to minimize thermal impedance.
  • The recommended gate drive voltage for the IPN60R600P7S is between 10V and 15V. However, the device can tolerate gate voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device and ensure optimal performance.
  • To protect the IPN60R600P7S from overvoltage and overcurrent, consider implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits in your design. These circuits can be implemented using external components such as zener diodes, resistors, and fuses. Additionally, ensure the device is operated within its specified voltage and current ratings.
  • The typical turn-on and turn-off time for the IPN60R600P7S is around 10-20 ns. However, this can vary depending on the gate drive voltage, PCB layout, and other factors. It's essential to consider the switching times when designing your application to ensure optimal performance and minimize losses.

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IPN60R600P7S Overview

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