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IPN60R600P7S - Infineon

Description: 600VCoolMOS P7PowerTransistor VDS max: 650V, RDS (on) max: 600mΩ, Qg,typ: 9nC, ID,pulse: 16A, Eoss @ 400V: 1.1µJ, Body diode diF/dt: 900A/µs, SMT, Package: PG-SOT223

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