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IPN70R2K0P7S - Infineon

Description: 700VCoolMOSªP7PowerTransistor, VDS @ Tj=25°C-700V, RDS(on),max-2.0Ω, Qg,typ-3.8nC, ID,pulse-5.7A, Eoss @ 400V-0.4µJ, V(GS)th,typ-3V

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IPN70R2K0P7S - Infineon PCB footprint - Other - Other - IPN70R2K0P7S
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IPN70R2K0P7S Details

  • Manufacturer Part Number:

    IPN70R2K0P7S

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-223, 3 PIN

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    700 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    2 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    6 W

  • Pulsed Drain Current-Max (IDM):

    5.7 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IPN70R2K0P7S Overview

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Part Image IPN70R2K0P7SATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 3A I(D), 700V, 2ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET