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IPN70R2K1CE - Infineon

Description: N-Channel Power MOSFEt VDS max: 750V, RDS (on) max: 2.1 mΩ, Qg,typ: 7.8nC, ID,pulse: 6.3A, Eoss @ 400V: 0.9µJ, Body diode diF/dt: 500A/µs, SMT, Package: PG-SOT223

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IPN70R2K1CE - Infineon PCB footprint - Other - Other - IPN70R2K1CE
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IPN70R2K1CE Details

  • Manufacturer Part Number:

    IPN70R2K1CE

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    700 V

  • Drain-source On Resistance-Max:

    2.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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