IPN70R750P7SATMA1 footprint, schematic symbol and 3D model by Infineon

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IPN70R750P7SATMA1 - Infineon PCB footprint - Other - Other - IPN70R750P7SATMA1-1

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Datasheet Download Datasheet
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Part Number IPN70R750P7SATMA1
Manufacturer Infineon
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - IPN70R750P7SATMA1-1
Released Date May 20, 2023
Last Modified Date May 20, 2023 6:25 AM UTC
Pinout / Pin List Click Here (Member Only)

IPN70R750P7SATMA1 Details

Manufacturer Part Number:
IPN70R750P7SATMA1
Rohs Code:
Yes
Part Life Cycle Code:
Obsolete
ECCN Code:
EAR99
Factory Lead Time:
17 Weeks
Manufacturer:
Infineon Technologies AG
YTEOL:
0
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
700 V
Drain-source On Resistance-Max:
0.75 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-PDSO-G3
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Min:
-40 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Surface Mount:
YES
Terminal Finish:
Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
DUAL
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

IPN70R750P7SATMA1 Frequently Asked Questions (FAQs)

The maximum operating temperature range for IPN70R750P7SATMA1 is -40°C to 150°C.
Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good airflow around the device.
The recommended gate resistor value for IPN70R750P7SATMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
Yes, IPN70R750P7SATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
Use a suitable overvoltage protection circuit and a current sense resistor to monitor and limit the current, and consider using a fuse or a circuit breaker to protect against overcurrent conditions.

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