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IPN80R2K0P7 - Infineon

Description: N-Channel Power MOSFET VDS max: 800V, RDS (on) max: 2.0Ω, Qg,typ: 9nC, ID,pulse: 3A, Eoss @ 500V: 0.85µJ, SMT, Package: PG-SOT223

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IPN80R2K0P7 - Infineon PCB footprint - Other - Other - IPN80R2K0P7
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IPN80R2K0P7 Details

  • Manufacturer Part Number:

    IPN80R2K0P7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.90

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Terminal Finish:

    Tin (Sn)

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

IPN80R2K0P7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPN80R2K0P7 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within the -20°C to 125°C range for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material. The recommended thermal resistance (RthJA) is ≤ 2.5 K/W. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • For optimal performance, it's recommended to follow Infineon's guidelines for PCB layout, which include: using a solid ground plane, keeping the power traces short and wide, and placing decoupling capacitors close to the device. Refer to Infineon's application notes for more detailed guidance.
  • Yes, the IPN80R2K0P7 is suitable for high-reliability and automotive applications. It meets the requirements of AEC-Q101 and is designed to withstand harsh environmental conditions. However, it's essential to follow Infineon's guidelines for qualification and testing in these applications.
  • The IPN80R2K0P7 is sensitive to electrostatic discharge (ESD). To handle it safely, use ESD-protective equipment, such as wrist straps, mats, and bags. Avoid touching the device's pins or handling it in environments with high electrostatic potential.

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IPN80R2K0P7 Overview

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