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IPP040N06N - Infineon

Description: MOSFET N Channel 60V 90A(Tc) 4V @ 90uA 4mΩ @ 90A,10V PG-TO220-3 RoHS

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PCB Footprints
IPP040N06N - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG TO220-3
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3D Models
IPP040N06N - Infineon  - 3D model - Transistor Outline, Vertical - PG TO220-3
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IPP040N06N Details

  • Manufacturer Part Number:

    IPP040N06N

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    70 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP040N06N Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IPP040N06N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to consult with Infineon's application notes or contact their support team for more information.
  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink or thermal interface material to reduce the thermal resistance between the device and the ambient environment. Also, ensure good airflow and avoid blocking the airflow around the device. Consult the datasheet and Infineon's application notes for more information on thermal design considerations.
  • The recommended gate resistor value for the IPP040N06N depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 Ω to 100 Ω is commonly used. However, it's recommended to consult with Infineon's application notes or contact their support team for more specific guidance on gate resistor selection.
  • Yes, the IPP040N06N is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate driver is capable of providing a fast switching signal. Additionally, consider the device's thermal capabilities and ensure proper cooling to prevent overheating.
  • To protect the IPP040N06N from overvoltage and overcurrent conditions, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions. Consult the datasheet and Infineon's application notes for more information on protection and fault handling.

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IPP040N06N Overview

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