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IPP041N04NGXKSA1 - Infineon

Description: INFINEON - IPP041N04NGXKSA1 - Power MOSFET, N Channel, 40 V, 80 A, 0.0033 ohm, TO-220, Through Hole

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IPP041N04NGXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPP041N04NGXKSA1*
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IPP041N04NGXKSA1 Details

  • Manufacturer Part Number:

    IPP041N04NGXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    94 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP041N04NGXKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPP041N04NGXKSA1 is 175°C, as specified in the datasheet.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • The maximum current rating of the IPP041N04NGXKSA1 is 41A, as specified in the datasheet. However, this rating is dependent on the PCB design, thermal management, and other application-specific factors.
  • Use a TVS (Transient Voltage Suppressor) diode or a zener diode to clamp overvoltages, and follow proper ESD handling and storage procedures to prevent damage.
  • The recommended gate resistor value depends on the specific application and switching frequency. A typical value is in the range of 10Ω to 100Ω, but consult the datasheet and application notes for more information.

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IPP041N04NGXKSA1 Overview

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Part Image IPP041N04NG Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IPP041N04NGHKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB