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IPP100N06S2L05AKSA2 - Infineon

Description: 55V, N-Ch, 4.7 mΩ max, Automotive MOSFET, TO-220, OptiMOS™

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IPP100N06S2L05AKSA2 - Infineon - PCB symbol
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PCB Footprints
IPP100N06S2L05AKSA2 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3-1(H=4.4mm)
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IPP100N06S2L05AKSA2 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO220-3-1(H=4.4mm)
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IPP100N06S2L05AKSA2 Details

  • Manufacturer Part Number:

    IPP100N06S2L05AKSA2

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    810 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0059 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPP100N06S2L05AKSA2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPP100N06S2L05AKSA2 is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good thermal contact between the MOSFET and heat sink.
  • The recommended gate resistor value for the IPP100N06S2L05AKSA2 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, the IPP100N06S2L05AKSA2 is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the gate drive circuitry is capable of handling the high-frequency switching.
  • Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IPP100N06S2L05AKSA2 Overview

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Part Image IPP100N06S2L-05 Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 55V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB