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IPP100N08S2L-07 - Infineon

Description: MOSFET N-Ch 75V 100A TO220-3 OptiMOS

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IPP100N08S2L-07 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3-1-
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IPP100N08S2L-07 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3-1-
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IPP100N08S2L-07 Details

  • Manufacturer Part Number:

    IPP100N08S2L-07

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    810 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0068 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPP100N08S2L-07 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPP100N08S2L-07 is 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or the PCB. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK, and ensure the heat sink is designed for the maximum power dissipation of the device. Additionally, follow the recommended PCB layout and thermal design guidelines in the datasheet.
  • The recommended gate drive voltage for the IPP100N08S2L-07 is between 10 V and 15 V. However, the device can tolerate gate drive voltages up to 20 V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device and ensure optimal performance.
  • To protect the IPP100N08S2L-07 from overvoltage and overcurrent, use a suitable voltage regulator or overvoltage protection (OVP) circuit to limit the voltage to the recommended maximum rating. Additionally, implement overcurrent protection (OCP) using a current sense resistor and a comparator or a dedicated OCP IC. Ensure the protection circuits are designed to respond quickly to fault conditions to prevent damage to the device.
  • The recommended PCB layout for the IPP100N08S2L-07 involves keeping the power loops as small as possible, using a solid ground plane, and minimizing the distance between the device and the decoupling capacitors. Ensure the PCB layout is designed to minimize electromagnetic interference (EMI) and electromagnetic compatibility (EMC) issues. Follow the recommended PCB layout guidelines in the datasheet and application notes for optimal performance and reliability.

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