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IPU80R1K4P7AKMA1 - Infineon

Description: IPU80R1K4P7AKMA1 N-Channel MOSFET, 4 A, 800 V CoolMOS P7, 3-Pin IPAK Infineon

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PCB Footprints
IPU80R1K4P7AKMA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO251-3
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3D Models
IPU80R1K4P7AKMA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO251-3
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IPU80R1K4P7AKMA1 Details

  • Manufacturer Part Number:

    IPU80R1K4P7AKMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    IPAK-3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    8 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    32 W

  • Pulsed Drain Current-Max (IDM):

    8.9 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPU80R1K4P7AKMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a reference design and layout guidelines in the application note AN2019-07, which should be followed for optimal thermal management and performance. Additionally, a thermal pad is recommended to improve heat dissipation.
  • Infineon recommends following the guidelines in the application note AN2019-07 for EMC considerations, including proper PCB layout, decoupling, and shielding. Additionally, the device should be used in conjunction with an EMI filter and a shielded enclosure.
  • The IPU80R1K4P7AKMA1 has an operating temperature range of -40°C to 150°C, with a maximum junction temperature of 150°C. However, the device should be derated for temperatures above 125°C to ensure reliable operation.
  • The IPU80R1K4P7AKMA1 can be programmed and configured using the Infineon Toolbox, which provides a graphical user interface for setting parameters, monitoring performance, and updating firmware. The device can also be controlled using a microcontroller or other external logic.
  • The typical start-up time for the IPU80R1K4P7AKMA1 is around 10 ms, although this can vary depending on the specific application and configuration. The device also has a sleep mode that can be used to reduce power consumption when not in use.

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IPU80R1K4P7AKMA1 Overview

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