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IPZ60R040C7 - Infineon

Description: MOSFET HIGH POWER_NEW MOSFET Metal Oxide Semi conductor Field Effect Transistor

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PCB Footprints
IPZ60R040C7 - Infineon PCB footprint - Other - Other - IPZ65R065C7-4
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IPZ60R040C7 - Infineon  - 3D model - Other - IPZ65R065C7-4
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IPZ60R040C7 Details

  • Manufacturer Part Number:

    IPZ60R040C7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6.22

  • Avalanche Energy Rating (Eas):

    249 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    227 W

  • Pulsed Drain Current-Max (IDM):

    211 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPZ60R040C7 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout for the IPZ60R040C7 in their application note AN2013-03. It suggests using a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
  • The IPZ60R040C7 requires a bias voltage of 15V to 20V on the gate driver pin (VCC) and a voltage supply of 10V to 20V on the source pin (VSS). Ensure that the bias voltage is stable and within the recommended range for optimal performance.
  • The maximum allowed power dissipation for the IPZ60R040C7 is 120W. However, this value can be derated based on the operating temperature and other environmental factors. Refer to the datasheet for more information on power dissipation and thermal management.
  • Yes, the IPZ60R040C7 is designed for high-frequency switching applications up to 100 kHz. However, the device's performance and reliability may be affected by high-frequency operation. Ensure that the device is properly cooled and biased, and that the PCB layout is optimized for high-frequency operation.
  • Infineon recommends using a voltage clamp or a TVS diode to protect the IPZ60R040C7 from overvoltage conditions. Additionally, a current sense resistor and a fuse can be used to detect and prevent overcurrent conditions. Ensure that the protection circuitry is designed to respond quickly to fault conditions to prevent damage to the device.

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IPZ60R040C7 Overview

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