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IPZ60R099C7XKSA1 - Infineon

Description: MOSFET HIGH POWER_NEW

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PCB Footprints
IPZ60R099C7XKSA1 - Infineon PCB footprint - Other - Other - PG-TO 247-4_2022
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3D Models
IPZ60R099C7XKSA1 - Infineon  - 3D model - Other - PG-TO 247-4_2022
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IPZ60R099C7XKSA1 Details

  • Manufacturer Part Number:

    IPZ60R099C7XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247, 4 PIN

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    97 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.099 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    83 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPZ60R099C7XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPZ60R099C7XKSA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value for IPZ60R099C7XKSA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, IPZ60R099C7XKSA1 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are synchronized and the IGBTs are matched in terms of threshold voltage and transconductance.
  • To protect the IGBT, use a suitable overvoltage protection circuit, such as a voltage clamp or a zener diode, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IPZ60R099C7XKSA1 Overview

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