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IRF100B202 - Infineon

Description: N-Channel MOSFET, 97 A, 100 V, 3 + Tab-Pin TO-220 Infineon IRF100B202

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PCB Footprints
IRF100B202 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB
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IRF100B202 - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB
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IRF100B202 Details

  • Manufacturer Part Number:

    IRF100B202

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    292 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    97 A

  • Drain-source On Resistance-Max:

    0.0086 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    154 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    221 W

  • Pulsed Drain Current-Max (IDM):

    380 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF100B202 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF100B202 is -40°C to 150°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the IRF100B202 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF100B202 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) diode, and consider adding overcurrent protection using a fuse or a current sense resistor.
  • The maximum allowed parasitic inductance for the IRF100B202 is 10nH. Exceeding this value can lead to reduced performance and reliability.

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