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IRF100P219XKMA1 - Infineon

Description: MOSFET TRENCH >=100V IR MOSFET - StrongIRFET 1.4mohm-1.7mohm

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Symbol
IRF100P219XKMA1 - Infineon - PCB symbol
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PCB Footprints
IRF100P219XKMA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-247AC
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3D Models
IRF100P219XKMA1 - Infineon - 3D model - Transistor Outline, Vertical - 3-Pin TO-247AC
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IRF100P219XKMA1 Details

  • Manufacturer Part Number:

    IRF100P219XKMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    464 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    195 A

  • Drain-source On Resistance-Max:

    0.0017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    780 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF100P219XKMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF100P219XKMA1 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and monitoring junction temperature.
  • The recommended gate drive voltage for the IRF100P219XKMA1 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF100P219XKMA1 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-protective environment.
  • The maximum allowable power dissipation for the IRF100P219XKMA1 is 150W, but this value can be derated based on the operating temperature and other factors.

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IRF100P219XKMA1 Overview

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