AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas):
350 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
40 V
Drain Current-Max (ID):
100 A
Drain-source On Resistance-Max:
0.009 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-262AA
JESD-30 Code:
R-PSIP-T3
JESD-609 Code:
e0
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
IN-LINE
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
400 A
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Finish:
Tin/Lead (Sn/Pb)
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
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IRF1104L Overview
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