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IRF1104PBF - Infineon

Description: Infineon IRF1104PBF N-channel MOSFET, 100 A, 40 V HEXFET, 3-Pin TO-220AB

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IRF1104PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRF1104PBF-1
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IRF1104PBF - Infineon  - 3D model - Transistor Outline, Vertical - IRF1104PBF-1
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IRF1104PBF Details

  • Manufacturer Part Number:

    IRF1104PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    350 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.009 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    170 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF1104PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF1104PBF is -55°C to 175°C.
  • To ensure proper cooling, ensure a good thermal interface between the device and the heat sink, and use a heat sink with a thermal resistance of less than 10°C/W.
  • The recommended gate drive voltage for the IRF1104PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF1104PBF from ESD, handle the device by the body or use an ESD wrist strap, and ensure the device is stored in an ESD-protected environment.
  • The maximum allowable power dissipation for the IRF1104PBF is 150W, but this can be increased with proper heat sinking and cooling.

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Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB