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IRF5210S - Infineon

Description: Transistor, MOSFET, SMT, IRF52

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IRF5210S - Infineon - PCB symbol
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PCB Footprints
IRF5210S - Infineon PCB footprint - Other - Other - PG-TO263-3-2 | D2PAK
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IRF5210S Details

  • Manufacturer Part Number:

    IRF5210S

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.75

  • Additional Feature:

    HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    38 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    225

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF5210S Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) that the IRF5210S can withstand is 175°C. This is not explicitly stated in the datasheet, but it is a common specification for MOSFETs in this class.
  • To ensure the IRF5210S is fully turned on, you need to apply a gate-source voltage (Vgs) of at least 10V. This is because the threshold voltage (Vth) of the MOSFET is around 4V, and applying 10V ensures that the device is fully enhanced.
  • The recommended gate resistor value for the IRF5210S depends on the specific application and the switching frequency. A general guideline is to use a gate resistor in the range of 10Ω to 100Ω. A lower value can help reduce switching losses, but may increase the risk of oscillations.
  • Yes, the IRF5210S is suitable for high-frequency switching applications up to several hundred kHz. However, you need to ensure that the device is properly driven and that the layout is optimized to minimize parasitic inductances and capacitances.
  • To protect the IRF5210S from overvoltage and overcurrent, you can use a combination of voltage clamping devices (such as TVS diodes) and current sensing resistors. You should also ensure that the device is operated within its safe operating area (SOA) and that the maximum ratings are not exceeded.

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IRF5210S Overview

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Part Image IRF5210STRL International Rectifier

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