Part Image

IRF530A - onsemi

Description: Trans MOSFET N-CH 100V 14A 3-Pin TO-220

Download IRF530A Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRF530A - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
click to zoom

IRF530A Details

  • Manufacturer Part Number:

    IRF530A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Date Of Intro:

    1999-06-06

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    261 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF530A Frequently Asked Questions (FAQs)

  • The IRF530A can operate safely between -55°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C for reliable operation.
  • To ensure the IRF530A is fully turned on, the gate-source voltage (VGS) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly.
  • The maximum continuous drain current (ID) for the IRF530A is 14A, but this can be increased to 42A for short pulses (e.g., in switching applications).
  • Use a voltage clamp or a zener diode to limit the voltage across the drain-source terminals, and consider adding ESD protection devices (e.g., TVS diodes) to prevent damage from electrostatic discharge.
  • The recommended gate resistor value depends on the specific application, but a typical value is around 10-20 ohms to limit the gate current and prevent oscillations.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRF530A Overview

Use the download button to access the IRF530A schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF53, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF530A

Showing 0 results

IRF530A Alternates

Showing results

Image Part Number Model
Part Image IRF530A Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF530A Samsung Semiconductor

Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF530A Motorola Semiconductor Products

Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB