Part Image

IRF530SPBF - Vishay

Description: N-Channel 100 V 14A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)

Download IRF530SPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRF530SPBF - Vishay PCB footprint - Other - Other - D2PAK (TO-263_2023
click to zoom

IRF530SPBF Details

  • Manufacturer Part Number:

    IRF530SPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    LEAD FREE, PLASTIC, SMD-220, D2PAK-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    69 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    88 W

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF530SPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF530SPBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The maximum allowable voltage for the IRF530SPBF is 100V.
  • Yes, the IRF530SPBF is suitable for switching applications due to its low RDS(on) and high switching speed.
  • Handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container to prevent ESD damage.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRF530SPBF Overview

Use the download button to access the IRF530SPBF schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF53, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF530SPBF

Showing 0 results

IRF530SPBF Alternates

Showing results

Image Part Number Model
Part Image IRF530STRRPBF International Rectifier

Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF530SPBF International Rectifier

Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF530STRL International Rectifier

Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF530S Motorola Semiconductor Products

Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF530STR International Rectifier

Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for IRF530SPBF, check out Findchips.com