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IRF530STRLPBF - Vishay

Description: MOSFET N-Chan 100V 14 Amp

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IRF530STRLPBF - Vishay PCB footprint - Other - Other - TO-263AB (HIGH VOLTAGE)
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IRF530STRLPBF Details

  • Manufacturer Part Number:

    IRF530STRLPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    LEAD FREE, PLASTIC, SMD-220, D2PAK-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    69 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    88 W

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF530STRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF530STRLPBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The maximum allowable voltage for the IRF530STRLPBF is 100V.
  • Yes, the IRF530STRLPBF is suitable for high-frequency switching applications up to 1MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the IRF530STRLPBF with ESD-protective equipment, and ensure proper grounding and shielding during storage, handling, and assembly.

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IRF530STRLPBF Overview

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Part Image IRF530SPBF International Rectifier

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Part Image IRF530S Motorola Semiconductor Products

Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF530S Vishay Siliconix

Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF530S Vishay Intertechnologies

Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for IRF530STRLPBF, check out Findchips.com