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IRF5803TRPBF - Infineon

Description: MOSFET MOSFT PCh -40V -3.4A 112mOhm 25nC

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PCB Footprints
IRF5803TRPBF - Infineon PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP -6
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3D Models
IRF5803TRPBF - Infineon  - 3D model - SOT23 (6-Pin) - TSOP -6
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IRF5803TRPBF Details

  • Manufacturer Part Number:

    IRF5803TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    3.4 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Time@Peak Reflow Temperature-Max (s):

    30

IRF5803TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF5803TRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF5803TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF5803TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag or tube.
  • The maximum allowable power dissipation for the IRF5803TRPBF is 150W, but this can be increased with proper heat sinking and thermal management.

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IRF5803TRPBF Overview

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