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IRF6215PBF - Infineon

Description: MOSFET P-Channel 150V 13A TO220AB International Rectifier IRF6215PBF P-channel MOSFET Transistor, 13 A, 150 V, 3-Pin TO-220AB

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IRF6215PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRF6215PBF
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IRF6215PBF Details

  • Manufacturer Part Number:

    IRF6215PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    310 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.29 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF6215PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF6215PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRF6215PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF6215PBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified frequency range and that proper thermal management is implemented.
  • Handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag or container to protect it from ESD.

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