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IRF6216TRPBF - Infineon

Description: International Rectifier IRF6216TRPBF P-channel MOSFET Transistor, -2.2 A, -150 V, 8-Pin SOIC

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IRF6216TRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8_1
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IRF6216TRPBF - Infineon  - 3D model - Small Outline Packages - SO-8_1
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IRF6216TRPBF Details

  • Manufacturer Part Number:

    IRF6216TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.24 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF6216TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF6216TRPBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The recommended gate drive voltage for the IRF6216TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF6216TRPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the IRF6216TRPBF with ESD-protective equipment, and ensure proper grounding and shielding during storage, handling, and assembly.

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IRF6216TRPBF Overview

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IRF6216TRPBF Alternates

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Image Part Number Model
Part Image IRF6216TRPBF International Rectifier

Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF6216PBF Infineon Technologies AG

Power Field-Effect Transistor

Part Image IRF6216TR Infineon Technologies AG

Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF6216 Infineon Technologies AG

Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF6216TR International Rectifier

Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

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