- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IRF6645
- Part Number IRF6645
- Manufacturer Infineon
- Pin Count 7
- Part Category MOSFET (N-Channel)
- Package Category Other
- Footprint Name Other - IRF6645-2
- Released Date Jun 21, 2019
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
IRF6645 Details
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Manufacturer Part Number:
IRF6645
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Infineon Technologies AG
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YTEOL:
4
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Avalanche Energy Rating (Eas):
29 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
100 V
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Drain Current-Max (ID):
5.7 A
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Drain-source On Resistance-Max:
0.035 Ω
IRF6645 Frequently Asked Questions (FAQs)
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The maximum operating temperature range for the IRF6645 is -55°C to 175°C, but it's recommended to operate within -40°C to 150°C for optimal performance and reliability.
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To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. Use a thermal interface material, and ensure the heat sink is properly attached to the device. Also, follow the recommended PCB layout and thermal design guidelines provided in the datasheet.
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The recommended gate drive voltage for the IRF6645 is between 10V to 15V, with a maximum of 20V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
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Yes, the IRF6645 is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure the gate drive circuitry is designed to minimize switching losses and ringing.
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To protect the IRF6645 from overvoltage and overcurrent conditions, use a suitable voltage regulator and overcurrent protection circuitry. Also, ensure the device is operated within its specified voltage and current ratings, and consider using a fuse or current limiter to prevent damage from excessive current.
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IRF6645 Overview
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