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IRF7105TRPBF - Infineon

Description: Infineon IRF7105TRPBF Dual N/P-Channel MOSFET, 2.3 A, 3.5 A, 25 V HEXFET, 8-Pin SOIC

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IRF7105TRPBF Details

  • Manufacturer Part Number:

    IRF7105TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SOP-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.32

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7105TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7105TRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF7105TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF7105TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in anti-static packaging.
  • The maximum allowable power dissipation for the IRF7105TRPBF is 125W, but this can be increased with proper heat sinking and thermal management.

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IRF7105TRPBF Overview

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IRF7105TRPBF Alternates

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Image Part Number Model
Part Image IRF7105TR Infineon Technologies AG

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7105PBF International Rectifier

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7105TRPBF International Rectifier

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7105TR International Rectifier

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7105PBF Infineon Technologies AG

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

For a full list of alternate parts for IRF7105TRPBF, check out Findchips.com