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IRF7331TRPBF - Infineon

Description: INFINEON - IRF7331TRPBF - MOSFET, DUAL N-CH, 20V, 7A, SOIC

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IRF7331TRPBF Details

  • Manufacturer Part Number:

    IRF7331TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SO-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7331TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7331TRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to ensure that the device is operated within the specified temperature range.
  • The recommended PCB layout for the IRF7331TRPBF involves using a thermal pad and vias to dissipate heat, and keeping the thermal path as short as possible.
  • Yes, the IRF7331TRPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to follow the recommended layout and design guidelines to minimize parasitic inductance and capacitance.
  • To protect the IRF7331TRPBF from ESD, it's essential to follow proper handling and storage procedures, and to use ESD protection devices such as diodes or resistors in the circuit design.

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Small Signal Field-Effect Transistor, 7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA