AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas):
260 mJ
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
13 A
Drain-source On Resistance-Max:
0.011 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
MS-012AA
JESD-30 Code:
R-PDSO-G8
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
2.5 W
Pulsed Drain Current-Max (IDM):
58 A
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRF7413PBF Frequently Asked Questions (FAQs)
The maximum operating temperature range for the IRF7413PBF is -55°C to 175°C.
To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
The recommended gate drive voltage for the IRF7413PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
Yes, the IRF7413PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper layout and decoupling to minimize ringing and EMI.
Use a suitable voltage regulator and overcurrent protection circuitry, such as a fuse or current-sensing resistor, to prevent damage from overvoltage and overcurrent conditions.
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IRF7413PBF Overview
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